ATEK153
6 – 13 GHz GaN Low Noise Amplifier
rev1.0 01.29.2021
Product Features
- Frequency Range: 6 – 13 GHz
- Gain: 13 dB
- Noise Figure: 2.2 dB
- P1dB: 29 dBm
- Psat: 30 dBm
- 1.15 x 2 mm compact chip size
Applications
- Radar
- Electronic Warfare
- Test Equipment
Product Description
ATEK153 is a low noise amplifier fabricated on GaN process. Amplifier operation range covers 6 – 13 GHz.
Due its process inherent features, amplifier can survive large RF input signal levels, which eliminates the need of lossy limiter circuitry usage at the amplifier input. This results in improved receiver noise figure and increased total system dynamic range.
Amplifier has two Vgg pads, which allows user to choose the class of operation, dynamically depending on the scenario of operation. Under large RF input drive, amplifier can be biased for improved linearity to increase the overall system dynamic range. If the RF input signal is low, the amplifier can be biased for low power consumption to save power.
Evaluation Board, bare die, custom package, and module options are available upon request.
| Parameter | Min | Typ | Max | Units | ||
|---|---|---|---|---|---|---|
| Operational Frequency Range | 6 | 13 | GHz | |||
| Gain | 6 GHz | 11.7 | dB | |||
| 8 GHz | 13.5 | |||||
| 10 GHz | 13 | |||||
| 12 GHz | 12 | |||||
| 13 GHz | 10 | |||||
| Noise Figure
(Vdd = 15 V, Idq=140 mA) |
8 GHz | 2.4 | dB | |||
| 10 GHz | 2 | |||||
| 12 GHz | 2.2 | |||||
| 13 GHz | 2.5 | |||||
| Input Return Loss | -9 | dB | ||||
| Output Return Loss | -12 | dB | ||||
| Output P1dB (Vdd = 15 V, Idq = 306 mA) | 29 | dBm | ||||
| Psat (Vdd = 15 V, Idq = 306 mA) | 31 | dBm | ||||
| DC Supply Voltage (Vdd1, Vdd2) | 5 | 20 | V | |||
| Operating Temperature | -40 | 85 | °C | |||
